TIO2 RECTIFYING BARRIERS

被引:7
作者
ENGLISH, F
GOSSICK, B
机构
关键词
D O I
10.1016/0038-1101(64)90013-9
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:193 / &
相关论文
共 22 条
[1]  
[Anonymous], 1957, RECTIFYING SEMICONDU
[2]  
BECKER JH, 1963, J PHYS SOC JAPAN S2, V18, P152
[3]  
BETHE HA, 1942, MIT4312 REP
[4]   ELECTRICAL PROPERTIES OF TITANIUM DIOXIDE SEMICONDUCTORS [J].
BRECKENRIDGE, RG ;
HOSLER, WR .
PHYSICAL REVIEW, 1953, 91 (04) :793-802
[5]   TITANIUM DIOXIDE RECTIFIERS [J].
BRECKENRIDGE, RG ;
HOSLER, WR .
JOURNAL OF RESEARCH OF THE NATIONAL BUREAU OF STANDARDS, 1952, 49 (02) :65-72
[6]  
DAVIS C, 1963, J APPL PHYS, V34, P228
[7]   RECENT STUDIES ON RUTILE (TIO2) [J].
FREDERIKSEN, H .
JOURNAL OF APPLIED PHYSICS, 1961, 32 :2211-&
[8]  
GORTON HC, 1955, ELEC ENG OCT
[9]   METAL-SEMICONDUCTOR RECTIFIERS AND TRANSISTORS [J].
GOSSICK, BR .
SOLID-STATE ELECTRONICS, 1963, 6 (05) :445-452
[10]   INJECTION CURRENTS IN INSULATORS [J].
LAMPERT, MA .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1962, 50 (08) :1781-&