A CLASSIFICATION OF THE DISTORTION SYMMETRIES NEAR VACANCIES IN ZINC BLENDE SEMICONDUCTORS

被引:4
作者
LANNOO, M
机构
来源
PHYSICA B & C | 1983年 / 116卷 / 1-3期
关键词
D O I
10.1016/0378-4363(83)90226-7
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
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页码:63 / 65
页数:3
相关论文
共 6 条
[1]  
ALLAN G, UNPUB PHYS REV
[2]  
[Anonymous], 1981, POINT DEFECTS SEMICO
[3]   THEORY OF THE SILICON VACANCY - AN ANDERSON NEGATIVE-U SYSTEM [J].
BARAFF, GA ;
KANE, EO ;
SCHLUTER, M .
PHYSICAL REVIEW B, 1980, 21 (12) :5662-5686
[4]  
Stoneham A. M., 1975, THEORY DEFECTS SOLID
[5]  
WATKINS GD, 1964, RAD DAMAGE SEMICONDU, P00097
[6]  
WATKINS GD, 1973, I PHYS C SER, V16, P228