ON THE RELAXATION OF FIELD-INDUCED OXIDE CHARGE IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS

被引：6

作者：

MEINERTZHAGEN, A ^{[1
]}

HENRY, V ^{[1
]}

PETIT, C ^{[1
]}

ELHDIY, A ^{[1
]}

JOURDAIN, M ^{[1
]}

机构：

[1] UNIV REIMS,ANAL SOLIDES SURFACES & INTERFACES LAB,F-51062 REIMS,FRANCE

来源：

SOLID-STATE ELECTRONICS | 1994年 / 37卷 / 08期

关键词：

D O I：

10.1016/0038-1101(94)90164-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have studied the time decay of the positive charge induced into a 12 nm thick oxide of MOS capacitors by Fowler Nordheim tunnel injection. We show that this charge is due to trapped holes and that at the same time neutral traps are induced. We underline the similarity of the above decay with the time dependence observed in luminescence decay and dielectric depolarization which is supposed to be due to a many body process.

引用

页码：1553 / 1556

页数：4

共 30 条

[1] ACOUSTIC-PHONON RUNAWAY AND IMPACT IONIZATION BY HOT-ELECTRONS IN SILICON DIOXIDE [J].

ARNOLD, D ;

CARTIER, E ;

DIMARIA, DJ .

PHYSICAL REVIEW B, 1992, 45 (03) :1477-1480

[2]

CARTIER E, INFOS 93

[3] IMPACT IONIZATION AND POSITIVE CHARGE FORMATION IN SILICON DIOXIDE FILMS ON SILICON [J].

DIMARIA, DJ ;

ARNOLD, D ;

CARTIER, E .

APPLIED PHYSICS LETTERS, 1992, 60 (17) :2118-2120

[4] IMPACT IONIZATION, TRAP CREATION, DEGRADATION, AND BREAKDOWN IN SILICON DIOXIDE FILMS ON SILICON [J].

DIMARIA, DJ ;

CARTIER, E ;

ARNOLD, D .

JOURNAL OF APPLIED PHYSICS, 1993, 73 (07) :3367-3384

[5]

DIMARIA DJ, 1989, J APPL PHYS, V65, P2355

[6] A CLUSTER APPROACH TO THE STRUCTURE OF IMPERFECT MATERIALS AND THEIR RELAXATION SPECTROSCOPY [J].

DISSADO, LA ;

HILL, RM .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, 1983, 390 (1798) :131-180

[7] THE FRACTAL NATURE OF THE CLUSTER MODEL DIELECTRIC RESPONSE FUNCTIONS [J].

DISSADO, LA ;

HILL, RM .

JOURNAL OF APPLIED PHYSICS, 1989, 66 (06) :2511-2524

[8] THEORY OF HIGH-FIELD ELECTRON-TRANSPORT IN SILICON DIOXIDE [J].

FISCHETTI, MV ;

DIMARIA, DJ ;

BRORSON, SD ;

THEIS, TN ;

KIRTLEY, JR .

PHYSICAL REVIEW B, 1985, 31 (12) :8124-8142

[9] HYSTERESIS AND FRANCK-CONDON RELAXATION IN INSULATOR-SEMICONDUCTOR TUNNELING [J].

FOWLER, WB ;

RUDRA, JK ;

ZVANUT, ME ;

FEIGL, FJ .

PHYSICAL REVIEW B, 1990, 41 (12) :8313-8317

[10] COMPARISON OF HIGH-FIELD STRESS EFFECTS IN METAL-OXIDE-SEMICONDUCTOR STRUCTURES WITH ALUMINUM AND POLYCRYSTALLINE SILICON GATES USING INTERNAL PHOTOEMISSION MEASUREMENTS [J].

HEYNS, MM ;

DEKEERSMAECKER, RF .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (10) :3936-3939

← 1 2 3 →