ANALYTIC SOLUTION OF THE CAVITY MODEL FOR INTERSTITIAL IMPURITIES IN SEMICONDUCTORS

被引：7

作者：

CHAUDHURI, S ^{[1
]}

COON, DD ^{[1
]}

机构：

[1] UNIV PITTSBURGH,DEPT PHYS & ASTRON,PITTSBURGH,PA 15260

来源：

PHYSICAL REVIEW B | 1984年 / 30卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.30.3338

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3338 / 3343

页数：6

共 13 条

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