HIGHLY EFFICIENT SINGLE LONGITUDINAL-MODE OSCILLATION CAPABILITY OF GAIN-COUPLED DISTRIBUTED FEEDBACK SEMICONDUCTOR-LASERS ADVANTAGE OF ASYMMETRIC FACET COATING

被引：18

作者：

NAKANO, Y

UCHIDA, Y

TADA, K

机构：

[1] Department of Electronic Engineering, University of Tokyo, Bunkyo-ku, Tokyo 113, Hongo

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1992年 / 4卷 / 04期

关键词：

D O I：

10.1109/68.127196

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The gain-coupled DFB laser is found to possess an uncommon and useful feature; unlike the quarter-wave phase shifted (index-coupled) DFB laser, it is possible to enhance single facet power extraction efficiency by applying an asymmetric AR-HR coating without demolishing its intrinsic single mode property.

引用

页码：308 / 311

页数：4

共 7 条

[1] YIELD ANALYSIS OF NON-AR-COATED DFB LASERS WITH COMBINED INDEX AND GAIN COUPLING
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[3] PURELY GAIN-COUPLED DISTRIBUTED FEEDBACK SEMICONDUCTOR-LASERS
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[4] TM MODE SUPPRESSION PROPERTY OF DFB LASERS WITH A NARROW STRIPE REGION
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[5] ANALYSIS, DESIGN, AND FABRICATION OF GAALAS/GAAS DFB LASERS WITH MODULATED STRIPE WIDTH STRUCTURE FOR COMPLETE SINGLE LONGITUDINAL MODE OSCILLATION
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[6] FACET REFLECTION INDEPENDENT, SINGLE LONGITUDINAL MODE OSCILLATION IN A GAALAS/GAAS DISTRIBUTED FEEDBACK LASER EQUIPPED WITH A GAIN-COUPLING MECHANISM
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[J]. APPLIED PHYSICS LETTERS, 1989, 55 (16) : 1606 - 1608
[7] ASYMMETRIC LAMBDA/4-SHIFTED INGAASP/INP DFB LASERS
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[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1987, 23 (06) : 815 - 821

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