INTERFACIAL CHARACTERIZATION OF ION-BEAM-DEPOSITED AC FILMS ON GE

被引：13

作者：

BRUCE, T ^{[1
]}

BELLO, I ^{[1
]}

HUANG, LJ ^{[1
]}

LAU, WM ^{[1
]}

HIGH, M ^{[1
]}

STRNAD, V ^{[1
]}

PANCHHI, P ^{[1
]}

机构：

[1] APPL PHYS SPECIALTIES LTD,TORONTO N6A 3K7,ON,CANADA

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 76卷 / 01期

关键词：

D O I：

10.1063/1.357110

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Diamondlike carbon films were deposited on germanium crystals with a mass-separated C+ ion beam in ultrahigh vacuum over the energy range 20-275 eV, and the interfaces were characterized with x-ray photoelectron spectroscopy. It was found that ion bombardment induced a carbide phase on the germanium surface. Further carbon accumulation then led to the growth of an amorphous carbon overlayer. The carbide phase was identified by a rather low C 1s binding energy (at about 283.8 eV) and small positive shift of the Ge 3p peak (about 0.4 eV). The valence-band spectra of these samples also suggested that germanium carbide formed with a pure carbon beam for the bombardment energy range considered has a band gap between germanium and diamondlike carbon.

引用

页码：552 / 557

页数：6

共 15 条

[1] LOW-PRESSURE, METASTABLE GROWTH OF DIAMOND AND DIAMONDLIKE PHASES [J].