A COMPARATIVE-STUDY OF GA(CH3)3, GA(C2H5)3 AND GA(C4H9)3 IN THE LOW-PRESSURE MOCVD OF GAAS

被引：53

作者：

PLASS, C ^{[1
]}

HEINECKE, H ^{[1
]}

KAYSER, O ^{[1
]}

LUTH, H ^{[1
]}

BALK, P ^{[1
]}

机构：

[1] RHEIN WESTFAL TH AACHEN,INST PHYS 2,D-5100 AACHEN,FED REP GER

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 88卷 / 04期

关键词：

D O I：

10.1016/0022-0248(88)90144-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：455 / 464

页数：10

共 47 条

[1] ON THE ROLE OF HYDROGEN IN THE MOCVD OF GAAS [J].

ARENS, G ;

HEINECKE, H ;

PUTZ, N ;

LUTH, H ;

BALK, P .

JOURNAL OF CRYSTAL GROWTH, 1986, 76 (02) :305-310

[2] ULTRAVIOLET INDUCED METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION GROWTH OF GAAS [J].

BALK, P ;

HEINECKE, H ;

PUTZ, N ;

PLASS, C ;

LUTH, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03) :711-715

[3]

BHAT R, 1982, I PHYS C SER, V63, P101

[4]

BRAUERS A, 1986, 1986 P EMRS M ADV MA, P231

[5]

BRAUNAGEL N, 1985, COMMUNICATION

[6] CHARACTERIZATION OF FAAS EPITAXIAL LAYERS BY LOW-PRESSURE MOVPE USING TEG AS GA SOURCE [J].

CHANG, CY ;

SU, YK ;

LEE, MK ;

CHEN, LG ;

HOUNG, MP .

JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :24-29

[7] HIGH-PURITY GAAS PREPARED FROM TRIMETHYLGALLIUM AND ARSINE [J].

DAPKUS, PD ;

MANASEVIT, HM ;

HESS, KL ;

LOW, TS ;

STILLMAN, GE .

JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :10-23

[8] THE GROWTH OF GAAS AT REDUCED PRESSURE IN AN ORGANOMETALLIC CVD SYSTEM [J].

FIELD, RJ ;

GHANDHI, SK .

JOURNAL OF CRYSTAL GROWTH, 1984, 69 (2-3) :581-588

[9] VACUUM CHEMICAL EPITAXY UTILIZING ORGANOMETALLIC SOURCES [J].

FRAAS, LM ;

MCLEOD, PS ;

PARTAIN, LD ;

COHEN, MJ ;

CAPE, JA .

JOURNAL OF ELECTRONIC MATERIALS, 1986, 15 (03) :175-180

[10] PLASMA STIMULATED MOCVD OF GAAS [J].

HEINECKE, H ;

BRAUERS, A ;

LUTH, H ;

BALK, P .

JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :241-249

← 1 2 3 4 5 →