SURFACE AND BULK STRUCTURAL DEFECTS IN HG1-XCDXTE

被引:15
作者
COLE, S
CAREY, GP
SILBERMAN, JA
SPICER, WE
WILSON, JA
机构
[1] SANTA BARBARA RES CTR,GOLETA,CA 93117
[2] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1985年 / 3卷 / 01期
关键词
D O I
10.1116/1.573203
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:206 / 211
页数:6
相关论文
共 16 条
[1]   DETERMINATION OF SLIP PLANES IN CDXHG(1-X)TE BY ETCHING OF DISLOCATIONS INTRODUCED BY MICROHARDNESS INDENTATIONS [J].
BROWN, M ;
WILLOUGHBY, AFW .
JOURNAL DE PHYSIQUE, 1979, 40 :151-155
[2]   THE MECHANICAL-PROPERTIES OF CDXHG1-XTE [J].
COLE, S ;
WILLOUGHBY, AFW ;
BROWN, M .
JOURNAL OF CRYSTAL GROWTH, 1982, 59 (1-2) :370-374
[3]  
COLE S, J MATER SCI
[4]   CHANGES IN THE LOCAL CHEMICAL-COMPOSITION DURING THE HG1-XCDXTE-AL INTERFACE FORMATION [J].
DANIELS, RR ;
MARGARITONDO, G ;
DAVIS, GD ;
BYER, NE .
APPLIED PHYSICS LETTERS, 1983, 42 (01) :50-52
[5]   INTERACTION OF THIN-LAYERS OF AL AND GE WITH CLEAVED (HG,CD)TE SURFACES [J].
DAVIS, GD ;
BYER, NE ;
DANIELS, RR ;
MARGARITONDO, G .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (03) :1726-1729
[6]   CRYSTALLOGRAPHIC POLARITY AND CHEMICAL ETCHING OF CDXHG1-XTE [J].
FEWSTER, PF ;
COLE, S ;
WILLOUGHBY, AFW ;
BROWN, M .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (07) :4568-4571
[7]   CLEAVAGE CRACKS AND DISLOCATIONS IN LIF-CRYSTALS [J].
GILMAN, JJ ;
KNUDSEN, C ;
WALSH, WP .
JOURNAL OF APPLIED PHYSICS, 1958, 29 (04) :601-607
[8]  
James T. N., COMMUNICATION
[9]  
MICKLETHWAITE WFH, 1981, SEMICONDUCT SEMIMET, V18, P48
[10]   REVELATION OF DISLOCATIONS IN (HG,CD)TE BY AN ETCH TECHNIQUE [J].
PARKER, SG ;
PINNELL, JE .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (11) :1868-&