ANTISITE DEFECTS IN IN1-YGAYAS1-XPX

被引：21

作者：

BUISSON, JP

ALLEN, RE

DOW, JD

机构：

[1] UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801

[2] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

关键词：

D O I：

10.1016/0038-1098(82)90850-X

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：833 / 836

页数：4

共 41 条

[1] ROLE OF SURFACE ANTISITE DEFECTS IN THE FORMATION OF SCHOTTKY BARRIERS
ALLEN, RE
DOW, JD
[J]. PHYSICAL REVIEW B, 1982, 25 (02): : 1423 - 1426
[2] ALLEN RE, 1981, SURF SCI, V110, pL625, DOI 10.1016/0039-6028(81)90633-6
[3] THEORY OF FRENKEL CORE EXCITONS AT SURFACES
ALLEN, RE
DOW, JD
[J]. PHYSICAL REVIEW B, 1981, 24 (02): : 911 - 914
[4] SELF-CONSISTENT CALCULATIONS OF THE ELECTRONIC-STRUCTURE FOR IDEAL GA AND AS VACANCIES IN GAAS
BACHELET, GB
BARAFF, GA
SCHLUTER, M
[J]. PHYSICAL REVIEW B, 1981, 24 (02): : 915 - 925
[5] BERES RP, 1982, PHYS REV B
[6] BERES RP, 1982, J VAC SCI TECHNOL
[7] SCATTERING-THEORETIC METHOD FOR DEFECTS IN SEMICONDUCTORS .1. TIGHT-BINDING DESCRIPTION OF VACANCIES IN SI, GE, AND GAAS
BERNHOLC, J
PANTELIDES, ST
[J]. PHYSICAL REVIEW B, 1978, 18 (04): : 1780 - 1789
[8] BERNHOLC J, 1980, 11TH INT C DEF RAD E
[9] BERNHOLC J, 1980, I PHYS C SER, V59, P1
[10] SURFACE-DEFECTS AND FERMI-LEVEL PINNING IN INP
DOW, JD
ALLEN, RE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03): : 659 - 661