SI-29 HYPERFINE-STRUCTURE OF UNPAIRED SPINS AT THE SI/SIO2 INTERFACE

被引：229

作者：

BROWER, KL

机构：

来源：

APPLIED PHYSICS LETTERS | 1983年 / 43卷 / 12期

关键词：

D O I：

10.1063/1.94244

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1111 / 1113

页数：3

共 14 条

[1]

Brower K. L., 1981, Nuclear and Electron Resonance Spectroscopies Applied to Materials Science. Proceedings of the Symposium, P71

[2] EPR TECHNIQUES FOR STUDYING DEFECTS IN SILICON [J].

BROWER, KL .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1977, 48 (02) :135-141

[3] ELECTRON-PARAMAGNETIC RESONANCE OF LATTICE DAMAGE IN OXYGEN-IMPLANTED SILICON [J].

BROWER, KL ;

BEEZHOLD, W .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (08) :3499-&

[4] EPR OF A [001] SI INTERSTITIAL COMPLEX IN IRRADIATED SILICON [J].

BROWER, KL .

PHYSICAL REVIEW B, 1976, 14 (03) :872-883

[5] ESR CENTERS, INTERFACE STATES, AND OXIDE FIXED CHARGE IN THERMALLY OXIDIZED SILICON WAFERS [J].

CAPLAN, PJ ;

POINDEXTER, EH ;

DEAL, BE ;

RAZOUK, RR .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (09) :5847-5854

[6]

DEWIT JG, 1971, ION IMPLANTATION SEM, P39

[7] OBSERVATION AND ANALYSIS OF PRIMARY SI-29 HYPERFINE-STRUCTURE OF E' CENTER IN NON-CRYSTALLINE SIO2 [J].

GRISCOM, DL ;

FRIEBELE, EJ ;

SIGEL, GH .

SOLID STATE COMMUNICATIONS, 1974, 15 (03) :479-483

[8]

JOHNSON NM, 1983, B AM PHYS SOC, V28, P248

[9] EPR STUDIES IN NEUTRON-IRRADIATED SILICON - NEGATIVE CHARGE STATE OF A NONPLANAR 5-VACANCY CLUSTER (V5-) [J].

LEE, YH ;

CORBETT, JW .

PHYSICAL REVIEW B, 1973, 8 (06) :2810-2826

[10]

LENAHAN PM, 1983, J APPL PHYS, V54, P1457, DOI 10.1063/1.332171

← 1 2 →