PERFORMANCE IMPROVEMENT OF AMORPHOUS-SILICON THIN-FILM TRANSISTORS WITH SIO2 GATE INSULATOR BY N-2 PLASMA TREATMENT

被引：12

作者：

KIM, JH ^{[1
]}

OH, EY ^{[1
]}

AHN, BC ^{[1
]}

KIM, D ^{[1
]}

JANG, J ^{[1
]}

机构：

[1] KYUNG HEE UNIV,DEPT PHYS,DONGDAEMOON KU,SEOUL 130701,SOUTH KOREA

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 06期

关键词：

D O I：

10.1063/1.111009

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We studied the performance improvement of hydrogenated amorphous silicon (a-Si:H) thin-film transistor (TFT) using atmospheric pressure chemical vapor deposition (APCVD) SiO2 as a gate insulator. The threshold voltage and the subthreshold swing decrease remarkably by N-2 plasma treatment on the APCVD SiO2 surface even though the field effect mobility changes little, indicating that the interface state density around the Fermi level is reduced significantly by N-2 plasma treatment. We obtained the high performance a-Si:H TFT with the field effect mobility of 1.25 cm(2)/V s, the threshold voltage of 3.5 V and the subthreshold swing of 0.45 V/dec.

引用

页码：775 / 776

页数：2