LOCALIZED VIBRATIONS OF CHARGED AND UNCHARGED IMPURITIES IN GAAS AND GAP

被引：13

作者：

LAITHWAITE, K

NEWMAN, RC

GREENE, PD

机构：

[1] JJ THOMSON PHYS LAB,READING RG6 2AF,ENGLAND

[2] STAND TELECOMMUN LAB LTD,LONDON RD,HARLOW,ESSEX,ENGLAND

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1975年 / 8卷 / 05期

关键词：

D O I：

10.1088/0022-3719/8/5/004

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：L77 / L79

页数：3

共 12 条

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[2]

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[6] BEHAVIOR OF BORON IMPURITIES IN N-TYPE GALLIUM-ARSENIDE AND GALLIUM-PHOSPHIDE [J].

MORRISON, SR ;

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JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1974, 7 (03) :633-644

[7]

NEWMAN RC, 1973, INFRARED STUDIES CRY

[8] DEFECT-INDUCED LATTICE-VIBRATIONS IN ZINC-BLENDE-TYPE CRYSTALS - MODIFIED MOLECULAR-MODEL CALCULATION [J].

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MITRA, SS .

PHYSICAL REVIEW B, 1972, 5 (02) :733-&

[9] VIBRATIONAL MODES OF DEFECTS IN GAP [J].

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ALLRED, W ;

BLUM, SE ;

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JOURNAL OF APPLIED PHYSICS, 1969, 40 (06) :2589-&

[10] LOCALIZED VIBRATIONAL MODES IN GALLIUM-ARSENIDE CONTAINING SILICON AND BORON [J].

THOMPSON, F ;

NEWMAN, RC .

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1972, 5 (15) :1999-&

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