INJECTION-LOCKING OF Q-SWITCHED ALGAAS LASER WITH FAST SATURABLE ABSORBER

被引：15

作者：

STELMAKH, N

LOURTIOZ, JM

JULIEN, FH

机构：

[1] Institut d'Electronique Fondamentale, URA 22 CNRS, Université Paris XI, Bät, 220

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 02期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19910103

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Injection of a weak CW laser beam in a Q-switched AlGaAs laser diode with a fast saturable absorber is shown to produce powerful single-mode picosecond pulses at 0.82 mu-m. The saturable absorber regions are obtained by deep implantation of heavy ions through the diode facets. Single-mode operation is achieved with CW injection powers as low as 50 muW. Peak powers exceeding 1.5 W are detected at the laser output. A time-resolved spectroscopy of the laser pulses reveals an overall downchirp of 1.5 nm.

引用

页码：160 / 162

页数：3

共 8 条

[1]

ALFEROV ZI, 1986, PISMA ZH TEKH FIZ+, V12, P1093

[2] GENERATION OF SINGLE-MODE PICOSECOND PULSES BY INJECTION LOCKING OF AN ALGAAS SEMICONDUCTOR-LASER [J].