BULK METAL-OXIDES AS A MODEL FOR THE ELECTRONIC-PROPERTIES OF PASSIVE FILMS

被引：73

作者：

SCHMUKI, P ^{[1
]}

BUCHLER, M ^{[1
]}

VIRTANEN, S ^{[1
]}

BOHNI, H ^{[1
]}

MULLER, R ^{[1
]}

GAUCKLER, LJ ^{[1
]}

机构：

[1] ETH ZURICH,ETH ZENTRUM,CHAIR NON MET MAT,CH-8092 ZURICH,SWITZERLAND

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1995年 / 142卷 / 10期

关键词：

D O I：

10.1149/1.2049984

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The aim of the present work is to compare the electronic properties of natural passive films on iron and chromium with sintered bulk metal oxides. The characterization of the semiconductive properties of various bulk oxides shows that the passive film on iron can be simulated by highly doped Fe2O3. The doping concentration of Fe-oxides is determined by their Fe2+ content. At a dopant level of approximate to 5.10(20) cm(-3) in Fe2O3 the flatband potential, bandgap energy, intensity of the photocurrent, and the doping concentration are in good agreement with the natural passive film. A major advantage in using sintered bulk oxides as models for natural passive films is that oxide properties can be separated from effects associated with the underlying substrate. Therefore it could be shown, e.g., that the photocurrent behavior in the case of passive film on iron and chromium is mechanistically determined by interband transitions and is not caused by a photoemission process from the underlying metal. Further, investigations of bulk Fe-oxides revealed that their chemical stability is determined by the Fe2+ content and can be significantly improved by Cr2O3 addition.

引用

页码：3336 / 3342

页数：7

共 20 条

[1]

[Anonymous], 1980, ELECTROCHEMISTRY SEM

[2]

BUECHLER M, 1994, THESIS EIDGENOSSISCH

[3] THE NATURE OF THE PASSIVE FILM ON IRON .2. AC IMPEDANCE STUDIES [J].

CAHAN, BD ;

CHEN, CT .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (03) :474-480

[4] A PHOTOELECTROCHEMICAL CHARACTERIZATION OF PASSIVE FILMS ON STAINLESS-STEELS [J].

DIPAOLA, A ;

DIQUARTO, F ;

SUNSERI, C .

CORROSION SCIENCE, 1986, 26 (11) :935-948

[5] The analysis of photoelectric sensitivity curves for clean metals at various temperatures [J].

Fowler, RH .

PHYSICAL REVIEW, 1931, 38 (01) :45-56

[6] DEPLETION-LAYER PHOTOEFFECTS IN SEMICONDUCTORS [J].

GARTNER, WW .

PHYSICAL REVIEW, 1959, 116 (01) :84-87

[7]

Johnson E. J., 1967, SEMICONDUCT SEMIMET, V3

[8] The theory of crystal rectifiers [J].

Mott, NF .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1939, 171 (A944) :0027-0038

[9] METASTABLE PITTING AND SEMICONDUCTIVE PROPERTIES OF PASSIVE FILMS [J].

SCHMUKI, P ;

BOHNI, H .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1992, 139 (07) :1908-1913

[10] LARGE-AREA PHOTOCURRENT BEHAVIOR AND LASER SPOT SCANNING OF PASSIVATED STAINLESS-STEELS [J].

SCHMUKI, P ;

BOHNI, H .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1994, 141 (02) :362-366

← 1 2 →