GENERATION OF OPTICAL EVANESCENT WAVES IN VACUUM-DEPOSITED THIN-FILMS OF ALPHA-OLIGOTHIOPHENES

被引:26
作者
KNOBLOCH, H
FICHOU, D
KNOLL, W
SASABE, H
机构
[1] CNRS,MAT MOLEC LAB,F-94320 THIAIS,FRANCE
[2] MAX PLANCK INST POLYMER RES,D-55021 MAINZ,GERMANY
关键词
D O I
10.1002/adma.19930050713
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The performance of oligothiophene-based field-effect transistors is thought to be dependent on the nature of the metal/semiconductor/insulator interfaces. The observation of evanescent optical waves in thin films of. for example, alpha-6T (see Figure) provides a non-destructive probe of the charge transfer processes taking place at these interfaces.
引用
收藏
页码:570 / 573
页数:4
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