ELECTRON-HOLE DROPLETS IN SEMICONDUCTING AND METALLIC SILICON

被引：19

作者：

HALLIWELL, RE ^{[1
]}

PARSONS, RR ^{[1
]}

机构：

[1] UNIV BRITISH COLUMBIA, VANCOUVER 8, BRITISH COLUMBI, CANADA

来源：

CANADIAN JOURNAL OF PHYSICS | 1974年 / 52卷 / 14期

关键词：

Compendex;

D O I：

10.1139/p74-179

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

SEMICONDUCTING SILICON

引用

页码：1336 / 1344

页数：9

共 33 条

[1] RADIATIVE RECOMBINATION IN HIGHLY DOPED GERMANIUM [J].

ALAGUILL.CB ;

CERNOGOR.J .

PHYSICA STATUS SOLIDI, 1969, 35 (02) :599-+

[2] SCREENING OF BOUND-STATE EXCITONS IN MODULATED REFLECTANCE [J].

ALBERS, WA .

PHYSICAL REVIEW LETTERS, 1969, 23 (08) :410-&

[3]

ALEKSEEV AS, 1971, FIZ TVERD TELA+, V12, P2855

[4]

ALEKSEEV AV, 1970, FIZ TVERD TELA+, V12, P735

[5] SEMICONDUCTOR-TO-METAL TRANSITION IN N-TYPE GROUP 4 SEMICONDUCTORS [J].

ALEXANDER, MN ;

HOLCOMB, DF .

REVIEWS OF MODERN PHYSICS, 1968, 40 (04) :815-+

[6]

Asnin V. M., 1972, Soviet Physics - Solid State, V14, P332

[7]

ASNIN VM, 1972, FIZ TVERD TELA+, V14, P399

[8] EXCITON ABSORPTION IN DOPED GERMANIUM [J].

ASNIN, VM ;

ROGACHEV, AA .

PHYSICA STATUS SOLIDI, 1967, 20 (02) :755-+

[9] INFRARED ABSORPTION IN HEAVILY DOPED N-TYPE SI [J].

BALKANSKI, M ;

AZIZA, A ;

AMZALLAG, E .

PHYSICA STATUS SOLIDI, 1969, 31 (01) :323-+

[10]

BENOITAL.C, 1973, PHYS REV B, V7, P1723, DOI 10.1103/PhysRevB.7.1723

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