OBSERVATION OF THE 2ND SUBBAND OCCUPATION IN THE P-TYPE (111) SI INVERSION LAYER

被引:7
作者
GUSEV, GM
KVON, ZD
NEIZVESTNYI, IG
OVSYUK, VN
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关键词
D O I
10.1016/0038-1098(83)90603-8
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
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页码:169 / 170
页数:2
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共 7 条
[1]  
ALTSHULER BL, 1981, ZH EKSP TEOR FIZ+, V81, P768
[2]  
Gusev G. M., 1982, Pis'ma v Zhurnal Eksperimental'noi i Teoreticheskoi Fiziki, V35, P206
[3]   OSCILLATORY MAGNETOCONDUCTANCE OF PARA-TYPE INVERSION LAYERS IN SI SURFACES [J].
LAKHANI, AA ;
STILES, PJ ;
CHENG, YC .
PHYSICAL REVIEW LETTERS, 1974, 32 (18) :1003-1006
[4]   SUBSTRATE BIAS EFFECTS ON SUBBAND SEPARATION AND INTERBAND SCATTERING IN SI (110) P-CHANNEL MOSFETS [J].
LAKHANI, AA ;
COLE, T ;
STILES, PJ .
SOLID STATE COMMUNICATIONS, 1981, 39 (04) :569-572
[5]  
Ohkawa F. J., 1975, Progress of Theoretical Physics Supplement, P164, DOI 10.1143/PTPS.57.164
[6]  
von Klitzing K., 1974, Solid State Communications, V15, P489, DOI 10.1016/0038-1098(74)91126-0
[7]   MAGNETOCONDUCTANCE AND WEAK LOCALIZATION IN SILICON INVERSION-LAYERS [J].
WHEELER, RG .
PHYSICAL REVIEW B, 1981, 24 (08) :4645-4651