ELECTRICAL BEHAVIOR OF A BI2O3 THIN-FILM PLANAR-TYPE DEVICE

The study of the electrical properties of Bi2O3 thin films is not of sufficient depth yet because of the difficulty of their (sandwiched) device fabrication. Therefore, using a planar-type device prepared instead of a sandwiched device, the electrical properties were examined. The residual voltage (Vr) and the thermally stimulated depolarization current originate from the same phenomenon due to depolarized and detrapped carriers in the device, by reason of the identity of their activation energies (0.63 and 0.65 eV). The amounts of total charge for bias are estimated from the value of dVr dtt=0. Moreover, the time dependences of charging (Ich) and discharging (Idc) currents reveal that the relaxation function of Ich differs from that of Idc and these relaxation functions are influenced by the applied voltage and temperature, respectively. The planar-type device is advantageous for the study of the dielectric Bi2O3 thin films. © 1990.