MOVPE OF INP USING TRIMETHYLINDIUM TRIMETHYLAMINE ADDUCT

被引:7
作者
KELLER, BP [1 ]
OELGART, G [1 ]
PICKENHAIN, R [1 ]
GRUMMT, G [1 ]
SEIFERT, W [1 ]
机构
[1] KARL MARX UNIV,SEKT CHEM,ARBEITSGEMEINSCHAFT A3-B5-HALBLEITER,TALSTR 35,O-7010 LEIPZIG,GERMANY
关键词
D O I
10.1002/crat.2170260302
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Growth of InP layers by MOVPE using trimethylindium-trimethylamine (TMIn-TMN) is described. Low temperature photoluminescence results reveal the high crystal quality indicated by the well resolved excitonic spectra and high internal quantum efficiency. A strong near-gap luminescence degradation with decreasing substrate temperature during the growth corresponds with the increasing deep level concentration estimated by the DLTS-investigations. In the specimens prepared at higher temperatures carbon and zinc are believed to be the main residual acceptors. From C-V data free carrier concentrations of 10(15) cm-3 were obtained.
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页码:253 / 261
页数:9
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