TEMPERATURE DISPERSION OF REFRACTIVE-INDEXES IN CRYSTALLINE AND AMORPHOUS-SILICON

被引：50

作者：

GHOSH, G

机构：

[1] Electrotechnical Laboratory, Light and Radio Waves Section, Tsukuba-Shi, Ibaraki-305, 1-1-4, Umezono

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 26期

关键词：

D O I：

10.1063/1.113790

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The temperature dependence of refractive indices (dn/dT) for crystalline and amorphous silicon is analyzed critically by use of a recently introduced physically meaningful model to find refractive indices at any operating temperature and wavelength. The opposite sign of the measured thermo-optic coefficients of the amorphous silicon at 0.6328 and 0.752 μm is investigated and is explained as due to the inverted position of the isentropic band gap rather than the crystalline silicon. © 1995 American Institute of Physics.

引用

页码：3570 / 3572

页数：3

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