PRESSURE-DEPENDENCE OF OXYGEN-RELATED DEFECT LEVELS IN SILICON

被引：28

作者：

KELLER, WW

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 55卷 / 10期

关键词：

D O I：

10.1063/1.332956

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3471 / 3477

页数：7

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