LASER-INDUCED ETCHING OF MN-ZN FERRITE AND ITS APPLICATION

被引:23
作者
LU, YF
TAKAI, M
NAGATOMO, S
MINAMISONO, T
NAMBA, S
机构
[1] OSAKA UNIV,EXTREME MAT RES CTR,TOYONAKA,OSAKA 560,JAPAN
[2] DS SCANNER CO LTD,HIGASHI KU,OSAKA 540,JAPAN
[3] OSAKA UNIV,FAC SCI,TOYONAKA,OSAKA 560,JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1989年 / 28卷 / 10期
关键词
D O I
10.1143/JJAP.28.2151
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:2151 / 2156
页数:6
相关论文
共 10 条
[1]  
Born M, 1970, PRINCIPLES OPTICS, P36
[2]   LASER-INDUCED CHEMICAL ETCHING OF CERAMIC PBTI1-XZRXO3 [J].
EYETT, M ;
BAUERLE, D ;
WERSING, W ;
LUBITZ, K ;
THOMANN, H .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1986, 40 (04) :235-239
[3]   EXCIMER-LASER-INDUCED ETCHING OF CERAMIC PBTI1-XZRXO3 [J].
EYETT, M ;
BAUERLE, D ;
WERSING, W ;
THOMANN, H .
JOURNAL OF APPLIED PHYSICS, 1987, 62 (04) :1511-1514
[4]  
LU YF, 1988, APPL PHYS A, V47, P319
[5]   MASKLESS DRY ETCHING OF GALLIUM-ARSENIDE WITH A SUB-MICRON LINEWIDTH BY LASER PYROLYSIS IN CCL4 GAS ATMOSPHERE [J].
TAKAI, M ;
TSUCHIMOTO, J ;
NAKAI, H ;
GAMO, K ;
NAMBA, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (11) :L852-L854
[6]   CWCO2-LASER ANNEALING OF ARSENIC IMPLANTED SILICON [J].
TAKAI, M ;
TSIEN, PH ;
TSOU, SC ;
ROSCHENTHALER, D ;
RAMIN, M ;
RYSSEL, H ;
RUGE, I .
APPLIED PHYSICS, 1980, 22 (02) :129-136
[7]   ION-IMPLANTATION IN SINGLE-CRYSTAL MAGNETIC FERRITE [J].
TAKAI, M ;
RYSSEL, H ;
LU, YF ;
MINAMISONO, T ;
NAMBA, S .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 39 (1-4) :728-731
[8]   THERMOCHEMICAL DRY ETCHING OF SINGLE-CRYSTAL FERRITE BY LASER IRRADIATION IN CCL4 GAS ATMOSPHERE [J].
TAKAI, M ;
LU, YF ;
KOIZUMI, T ;
NAMBA, S ;
NAGATOMO, S .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1988, 46 (03) :197-205
[9]  
TAKAI M, 1986, LASER PROCESSING DIA, V2, P57
[10]   RAPID DIRECT WRITING OF HIGH-ASPECT-RATIO TRENCHES IN SILICON [J].
TREYZ, GV ;
BEACH, R ;
OSGOOD, RM .
APPLIED PHYSICS LETTERS, 1987, 50 (08) :475-477