BLUE-LIGHT STIMULATED-EMISSION FROM A LOCALIZED STATE FORMED BY WELL-BARRIER FLUCTUATION IN A II-VI SEMICONDUCTOR SUPERLATTICE

被引：48

作者：

KURODA, Y

SUEMUNE, I

FUJII, Y

FUJIMOTO, M

机构：

[1] Faculty of Engineering, Hiroshima University, Higashihiroshima 724

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 10期

关键词：

D O I：

10.1063/1.107640

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A well-defined exciton absorption peak from a localized state was observed for the first time. The localized state was formed by fluctuation of well-barrier interfaces in a ZnSe/ZnSSe superlattice structure. Stimulated emission was observed from the localized state up to 100 K, and the physical origin is discussed from the temperature dependence of the stimulated emission peak. This opens the possibility to form a natural quantum box structure by controlling the well-barrier fluctuation.

引用

页码：1182 / 1184

页数：3

共 7 条

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