METAL-SEMICONDUCTOR-METAL STRUCTURES AS ELECTRON DETECTOR FOR 1 KV MICROCOLUMNS

被引：6

作者：

FRESSER, HS

PRINS, FE

KERN, DP

机构：

[1] Institut für Angewandte Physik, Universität Tübingen, D-72076 Tübingen

来源：

MICROELECTRONIC ENGINEERING | 1995年 / 27卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(94)00079-A

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have developed metal-semiconductor-metal structures for low energy electron detection. Devices, with 250 nm wide Ti-fingers and 1.3 mum spacing, were fabricated using e-beam lithography on high resistivity Si. An amplification of incident low energy electrons of up to 200 is demonstrated. This feature together with the planar geometry of the device should allow application in 1 kV microcolumns.

引用

页码：159 / 162

页数：4

共 6 条

[1]

Chang, Kern, Muray, Arrayed miniature electron beam columns for high throughput sub-100 nm lithography, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 6 B, (1992)

[2]

Muray, Staufer, Kern, Chang, Performance measurements of a 1-keV electron-beam microcolumn, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 6 B, (1992)

[3]

Joy, Luo, An empirical stopping power relationship for low-energy electrons, Scanning, 11, (1989)

[4]

Koscielniak, Pelouard, Kolbas, Littlejohn, IEEE Trans. Electron Devices, 37, (1990)

[5]

Sze, Coleman, Loya, Solid-State Electron., 14, (1983)

[6]

Darling, J. Appl. Phys., 67, (1990)

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