WIDE-GAP BORON-DOPED MICROCRYSTALLINE SILICON-NITRIDE

被引：7

作者：

HASEGAWA, S

SEGAWA, M

KURATA, Y

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 18期

关键词：

D O I：

10.1063/1.97407

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1178 / 1180

页数：3

共 15 条

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[6]

HASEGAWA S, UNPUB

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[10] PROPERTIES OF HYDROGENATED AMORPHOUS SI-N PREPARED BY VARIOUS METHODS [J].

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