THE ROLE OF HYDROGEN IN CURRENT-INDUCED DEGRADATION OF CARBON-DOPED GAAS/ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：24

作者：

REN, F ^{[1
]}

ABERNATHY, CR ^{[1
]}

CHU, SNG ^{[1
]}

LOTHIAN, JR ^{[1
]}

PEARTON, SJ ^{[1
]}

机构：

[1] UNIV FLORIDA, GAINESVILLE, FL 32611 USA

来源：

SOLID-STATE ELECTRONICS | 1995年 / 38卷 / 06期

关键词：

D O I：

10.1016/0038-1101(94)00230-D

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

At current densities greater than or equal to 5 x 10(4) A cm(-2) carbon-doped base GaAs/AlGaAs HBTs can display decreases in d.c. current gain which are correlated with the amount of hydrogen incorporated in the base layer during growth by Metalorganic Molecular Beam Epitaxy (MOMBE). During device operation, minority carrier injection-induced debonding of hydrogen from neutral C-H complexes leads to an increase in effective base doping level and therefore to a decrease in current gain. In structures grown under conditions where large concentrations of hydrogen are incorporated in the base region, post-growth in situ or ex situ annealing eliminates this effect by breaking up the C--H complexes. Properly designed HBTs are stable for >90 h even for very high collector current densities (10(5) A cm(-2)).

引用

页码：1137 / 1141

页数：5

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