ELECTRON-PARAMAGNETIC RESONANCE OF NEUTRON-IRRADIATION INDUCED DEFECTS IN GALLIUM-ARSENIDE

被引：12

作者：

GOLTZENE, A

MEYER, B

SCHWAB, C

机构：

来源：

REVUE DE PHYSIQUE APPLIQUEE | 1983年 / 18卷 / 11期

关键词：

D O I：

10.1051/rphysap:019830018011070300

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：703 / 707

页数：5

共 15 条

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[4] THE OBSERVATION OF HIGH-CONCENTRATIONS OF ARSENIC ANTI-SITE DEFECTS IN ELECTRON-IRRADIATED NORMAL-TYPE GAAS BY X-BAND ELECTRON-PARAMAGNETIC-RES [J].

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[9] COMPENSATION MECHANISMS IN GAAS [J].

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[10] MANIFESTATIONS OF DEEP LEVELS POINT-DEFECTS IN GAAS [J].

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