MEASUREMENTS OF DISTRIBUTION OF DEFECT INTRODUCTION RATE WITH DEPTH IN SILICON IRRADIATED WITH 300-KEV ELECTRONS

被引：10

作者：

HITCHCOCK, AJ

机构：

来源：

关键词：

D O I：

10.1063/1.1782111

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2726 / +

页数：1

共 16 条

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LOFERSKI, JJ
[J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (08) : 2146 - +
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[J]. PHYSICAL REVIEW, 1959, 114 (06): : 1414 - 1420
[9] JONSCHER AK, 1960, PRINCIPLES SEMICONDU, P107
[10] SAITO H, 1963, J PHYS SOC JAPAN S3, V18, P246