BULK GAAS MICROWAVE AMPLIFERS

被引:12
作者
FOYT, AG
QUIST, TM
机构
关键词
D O I
10.1109/T-ED.1966.15662
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:199 / &
相关论文
共 4 条
[1]   INSTABILITIES OF CURRENT IN 3-V SEMICONDUCTORS [J].
GUNN, JB .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (02) :141-&
[2]  
MCCUMBER DE, 1966, IEEE T ELECTRON DEV, VED13, P4
[3]   NEGATIVE RESISTANCE ARISING FROM TRANSIT TIME IN SEMICONDUCTOR DIODES [J].
SHOCKLEY, W .
BELL SYSTEM TECHNICAL JOURNAL, 1954, 33 (04) :799-826
[4]   MICROWAVE AMPLIFICATION IN A DC-BIASED BULK SEMICONDUCTOR (N-TYPE GAAS RESISTIVITY EFFECT E-T) [J].
THIM, HW ;
BARBER, MR ;
HAKKI, BW ;
KNIGHT, S ;
UENOHARA, M .
APPLIED PHYSICS LETTERS, 1965, 7 (06) :167-&