HIGH-POWER SINGLE-MODE ALGAAS LASERS WITH BENT-WAVE-GUIDE NONABSORBING ETCHED MIRRORS

被引:11
作者
GFELLER, FR
BUCHMANN, P
EPPERLEIN, PW
MEIER, HP
REITHMAIER, JP
机构
[1] IBM Research Division, Zurich Research Laboratory, CH-8803 Rüschlikon
关键词
D O I
10.1063/1.351601
中图分类号
O59 [应用物理学];
学科分类号
摘要
A nonabsorbing etched mirror structure for AlGaAs single-quantum-well graded-refractive-index separate-confinement heterostructure ridge lasers is analyzed with respect to mirror coupling coefficient, threshold current penalty, and far-field pattern. Measurements of the mirror temperature showed a reduction from 50 to 20 K at 30 mW optical power depending on the degree of overlap of the optical intensity with the absorbing bent-waveguide profile. Pulsed catastrophic optical damage power levels up to 400 mW and a thermally saturated cw power of 165 mW with single-mode operation up to 80 mW have been achieved. Lifetime measurements at 40 mW constant optical power indicated degradation rates < 10(-5)/h comparable to AlGaAs lasers with cleaved and coated mirrors.
引用
收藏
页码:2131 / 2135
页数:5
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