BORON-INDUCED RECONSTRUCTIONS OF SI(001) INVESTIGATED BY SCANNING-TUNNELING-MICROSCOPY

被引：42

作者：

WANG, YJ

HAMERS, RJ

机构：

[1] Department of Chemistry, University of Wisconsin, Madison

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1995年 / 13卷 / 03期

关键词：

D O I：

10.1116/1.579682

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The local geometric and electronic structures of boron-induced reconstructions produced by thermal decomposition of diborane and decaborane on Si(001) have been investigated using scanning tunneling microscopy (STM). STM images show that boron induces several related reconstructions arising from ordered arrangements of simple structural subunits. These boron-induced atomic rearrangements order even at very low boron exposures, leading to a striking spatial segregation of boron on the surface. Similar reconstructions are observed using diborane and decaborane as boron precursors. Annealing at 1000 K for 90 s substantially improves the surface ordering, without significant diffusion of boron from the surface to the bulk. © 1995, American Vacuum Society. All rights reserved.

引用

页码：1431 / 1437

页数：7

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