THE CASE FOR AUGER RECOMBINATION IN IN1-XGAXASYP1-Y

[1] AMBIPOLAR TRANSPORT IN DOUBLE HETEROSTRUCTURE INJECTION-LASERS [J]. ELECTRON DEVICE LETTERS, 1980, 1 (04): : 58 - 60

[2] OVERLAP INTEGRALS FOR BLOCH ELECTRONS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1963, 82 (527): : 337 - &

[3] ONE-DIMENSIONAL OVERLAP FUNCTIONS AND THEIR APPLICATION TO AUGER RECOMBINATION IN SEMICONDUCTORS [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1960, 258 (1295): : 486 - 495

[4] AUGER EFFECT IN SEMICONDUCTORS [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1959, 249 (1256): : 16 - 29

[5] RECOMBINATION IN SEMICONDUCTORS BY A LIGHT HOLE AUGER TRANSITION [J]. PHYSICA STATUS SOLIDI, 1967, 19 (02): : 577 - &

[6] AUGER RECOMBINATION IN GAAS AN GASB [J]. PHYSICAL REVIEW B, 1977, 16 (02): : 843 - 855

[7] POSSIBLE MECHANISM FOR RADIATIONLESS RECOMBINATION IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1957, 105 (05): : 1469 - 1475

[8] BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS

[9] BONCHBRUEVICH VL, 1960, FIZ TVERD TELA, V2, P465

[10] CONCENTRATION-DEPENDENT ABSORPTION AND SPONTANEOUS EMISSION OF HEAVILY DOPED GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (02) : 631 - 643

[1] AMBIPOLAR TRANSPORT IN DOUBLE HETEROSTRUCTURE INJECTION-LASERS [J]. ELECTRON DEVICE LETTERS, 1980, 1 (04): : 58 - 60

[2] OVERLAP INTEGRALS FOR BLOCH ELECTRONS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1963, 82 (527): : 337 - &

[3] ONE-DIMENSIONAL OVERLAP FUNCTIONS AND THEIR APPLICATION TO AUGER RECOMBINATION IN SEMICONDUCTORS [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1960, 258 (1295): : 486 - 495

[4] AUGER EFFECT IN SEMICONDUCTORS [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1959, 249 (1256): : 16 - 29

[5] RECOMBINATION IN SEMICONDUCTORS BY A LIGHT HOLE AUGER TRANSITION [J]. PHYSICA STATUS SOLIDI, 1967, 19 (02): : 577 - &

[6] AUGER RECOMBINATION IN GAAS AN GASB [J]. PHYSICAL REVIEW B, 1977, 16 (02): : 843 - 855

[7] POSSIBLE MECHANISM FOR RADIATIONLESS RECOMBINATION IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1957, 105 (05): : 1469 - 1475

[8] BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS

[9] BONCHBRUEVICH VL, 1960, FIZ TVERD TELA, V2, P465

[10] CONCENTRATION-DEPENDENT ABSORPTION AND SPONTANEOUS EMISSION OF HEAVILY DOPED GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (02) : 631 - 643