INTERACTION OF LITHIUM WITH IMPURITIES AND DEFECTS IN SILICON

被引：11

作者：

FANG, PH

LIU, YM

机构：

来源：

关键词：

D O I：

10.1063/1.1754614

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：364 / &

共 6 条

[1] ANNEALING OF RADIATION INDUCED DEFECTS IN SILICON
FANG, PH
[J]. PHYSICS LETTERS, 1966, 20 (04): : 343 - &
[2] LOW-TEMPERATURE ANNEALING STUDIES IN GE
MACKAY, JW
KLONTZ, EE
[J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) : 1269 - 1274
[3] PELL EM, 1960, SOLID STATE PHYS, V1, P261
[4] CHEMICAL INTERACTIONS AMONG DEFECTS IN GERMANIUM AND SILICON
REISS, H
FULLER, CS
MORIN, FJ
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1956, 35 (03): : 535 - 636
[5] VAVILOV VS, 1965, 7 P INT C PHYS SEM, V3, P115
[6] WYSOCKI, 1966, APPL PHYS LETTERS, V9, P44