PHOTOELECTRON AND ELECTRON-ENERGY LOSS SPECTRA OF EPITAXIAL ALUMINUM NITRIDE

[1] BAND STRUCTURES OF GAN AND ALN [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (09) : 2027 - &

[2] EGRI I, 1982, SOLID STATE COMMUN, V44, P563, DOI 10.1016/0038-1098(82)90555-5

[3] EXCITONS AND PLASMONS IN WIDE GAPS - SOLID RARE-GASES [J]. SOLID STATE COMMUNICATIONS, 1976, 19 (02) : 123 - 126

[4] PLASMONS AND EXCITONS IN INSULATORS - DIELECTRIC TREATMENT [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1976, 9 (11): : 2031 - 2048

[5] TOTAL-ENERGY CALCULATIONS FOR SI WITH A 1ST-PRINCIPLES LINEAR-COMBINATION-OF-ATOMIC-ORBITALS METHOD [J]. PHYSICAL REVIEW B, 1982, 25 (02): : 1109 - 1115

[6] ENERGY BAND STRUCTURE OF ALN [J]. PHYSICA STATUS SOLIDI, 1969, 36 (02): : K95 - +

[7] EXCITON AND PLASMON IN INSULATING CRYSTALS [J]. PROGRESS OF THEORETICAL PHYSICS, 1959, 21 (01): : 113 - 134

[8] ELECTRONIC BAND STRUCTURES OF WIDE BAND GAP SEMICONDUCTORS GAN AND A1N [J]. SOLID STATE COMMUNICATIONS, 1972, 11 (05) : 701 - +

[9] SEMIEMPIRICAL TIGHT-BINDING BAND STRUCTURES OF WURTZITE SEMICONDUCTORS - ALN, CDS, CDSE, ZNS, AND ZNO [J]. PHYSICAL REVIEW B, 1983, 28 (02): : 935 - 945

[10] TOTAL VALENCE-BAND DENSITIES OF STATES OF III-V AND II-VI COMPOUNDS FROM X-RAY PHOTOEMISSION SPECTROSCOPY [J]. PHYSICAL REVIEW B, 1974, 9 (02): : 600 - 621

[1] BAND STRUCTURES OF GAN AND ALN [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (09) : 2027 - &

[2] EGRI I, 1982, SOLID STATE COMMUN, V44, P563, DOI 10.1016/0038-1098(82)90555-5

[3] EXCITONS AND PLASMONS IN WIDE GAPS - SOLID RARE-GASES [J]. SOLID STATE COMMUNICATIONS, 1976, 19 (02) : 123 - 126

[4] PLASMONS AND EXCITONS IN INSULATORS - DIELECTRIC TREATMENT [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1976, 9 (11): : 2031 - 2048

[5] TOTAL-ENERGY CALCULATIONS FOR SI WITH A 1ST-PRINCIPLES LINEAR-COMBINATION-OF-ATOMIC-ORBITALS METHOD [J]. PHYSICAL REVIEW B, 1982, 25 (02): : 1109 - 1115

[6] ENERGY BAND STRUCTURE OF ALN [J]. PHYSICA STATUS SOLIDI, 1969, 36 (02): : K95 - +

[7] EXCITON AND PLASMON IN INSULATING CRYSTALS [J]. PROGRESS OF THEORETICAL PHYSICS, 1959, 21 (01): : 113 - 134

[8] ELECTRONIC BAND STRUCTURES OF WIDE BAND GAP SEMICONDUCTORS GAN AND A1N [J]. SOLID STATE COMMUNICATIONS, 1972, 11 (05) : 701 - +

[9] SEMIEMPIRICAL TIGHT-BINDING BAND STRUCTURES OF WURTZITE SEMICONDUCTORS - ALN, CDS, CDSE, ZNS, AND ZNO [J]. PHYSICAL REVIEW B, 1983, 28 (02): : 935 - 945

[10] TOTAL VALENCE-BAND DENSITIES OF STATES OF III-V AND II-VI COMPOUNDS FROM X-RAY PHOTOEMISSION SPECTROSCOPY [J]. PHYSICAL REVIEW B, 1974, 9 (02): : 600 - 621