VIBRATIONAL-MODES OF C-60 FULLERENE ON SI(111)7X7 SURFACE - ESTIMATION OF CHARGE-TRANSFER FROM SILICON DANGLING BONDS TO C-60 MOLECULES

被引:19
作者
SUTO, S
KASUYA, A
IKENO, O
HU, CW
WAWRO, A
NISHITANI, R
GOTO, T
NISHINA, Y
机构
[1] TOHOKU UNIV, INST MAT RES, SENDAI, MIYAGI 980, JAPAN
[2] KYUSHU INST TECHNOL, DEPT COMP SCI & ELECTR, IIZUKA, FUKUOKA 820, JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1994年 / 33卷 / 10B期
关键词
C-60; FULLERENES; HREELS; STM; SI(111);
D O I
10.1143/JJAP.33.L1489
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have investigated vibrational modes of C-60 monolayer firm adsorbed on the Si(111)7 x 7 surface using high-resolution electron-energy-loss spectroscopy in combination with scanning tunneling microscopy. The differences in energies and in oscillator strengths from a thick C-60 film (i.e., bulk C-60) ace discussed in terms of the charge transfer from silicon dangling bonds to C-60 molecules. The amount of charge transfer is estimated to be 1+/-1 electron(s) compared with the infrared absorption spectra of alkaline-doped C-60 fullerides and with the weak electron-molecular-vibration coupling calculation.
引用
收藏
页码:L1489 / L1492
页数:4
相关论文
共 19 条
[1]   VIBRATIONAL RAMAN AND INFRARED-SPECTRA OF CHROMATOGRAPHICALLY SEPARATED C60 AND C70 FULLERENE CLUSTERS [J].
BETHUNE, DS ;
MEIJER, G ;
TANG, WC ;
ROSEN, HJ ;
GOLDEN, WG ;
SEKI, H ;
BROWN, CA ;
DEVRIES, MS .
CHEMICAL PHYSICS LETTERS, 1991, 179 (1-2) :181-186
[2]   HIGH-RESOLUTION ELECTRON-ENERGY LOSS SPECTROSCOPY OF EPITAXIAL-FILMS OF C-60 GROWN ON GASE [J].
GENSTERBLUM, G ;
YU, LM ;
PIREAUX, JJ ;
THIRY, PA ;
CAUDANO, R ;
LAMBIN, P ;
LUCAS, AA ;
KRATSCHMER, W ;
FISCHER, JE .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1992, 53 (11) :1427-1432
[3]   C-60 GROWTH ON SI(100), GASE(0001) AND GES(001) - INFLUENCE OF THE SUBSTRATE ON THE FILM CRYSTALLINITY [J].
GENSTERBLUM, G ;
YU, LM ;
PIREAUX, JJ ;
THIRY, PA ;
CAUDANO, R ;
THEMLIN, JM ;
BOUZIDI, S ;
COLETTI, F ;
DEBEVER, JM .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1993, 56 (03) :175-183
[4]  
Hang Xu, 1993, Physical Review Letters, V70, P1850, DOI 10.1103/PhysRevLett.70.1850
[5]  
Ibach H., 1982, ELECTRON ENERGY LOSS
[6]   LOW-TEMPERATURE SURFACE CLEANING OF SILICON AND ITS APPLICATION TO SILICON MBE [J].
ISHIZAKA, A ;
SHIRAKI, Y .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (04) :666-671
[7]  
Kroto H.W., 1993, FULLERENES
[8]   ELEMENTARY EXCITATIONS OF C-60 FROM THE FAR INFRARED TO THE FAR VACUUM ULTRAVIOLET STUDIED BY HIGH-RESOLUTION ELECTRON-ENERGY-LOSS SPECTROSCOPY [J].
LUCAS, A ;
GENSTERBLUM, G ;
PIREAUX, JJ ;
THIRY, PA ;
CAUDANO, R ;
VIGNERON, JP ;
LAMBIN, P ;
KRATSCHMER, W .
PHYSICAL REVIEW B, 1992, 45 (23) :13694-13702
[9]   INSITU INFRARED TRANSMISSION STUDY OF RB-DOPED AND K-DOPED FULLERENES [J].
MARTIN, MC ;
KOLLER, D ;
MIHALY, L .
PHYSICAL REVIEW B, 1993, 47 (21) :14607-14610
[10]   DETERMINATION OF CHARGE STATES OF C-60 ADSORBED ON METAL-SURFACES [J].
MODESTI, S ;
CERASARI, S ;
RUDOLF, P .
PHYSICAL REVIEW LETTERS, 1993, 71 (15) :2469-2472