EFFECTS OF NONRADIATIVE DEEXCITATION OF EXCITED SPUTTERED ATOMS NEAR SILICON AND SILICON DIOXIDE SURFACES

被引：61

作者：

WHITE, CW ^{[1
]}

SIMMS, DI ^{[1
]}

TOLK, NH ^{[1
]}

MCCAUGHAN, DV ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

SURFACE SCIENCE | 1975年 / 49卷 / 02期

关键词：

D O I：

10.1016/0039-6028(75)90378-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：657 / 663

页数：7

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