EFFECTS OF NONRADIATIVE DEEXCITATION OF EXCITED SPUTTERED ATOMS NEAR SILICON AND SILICON DIOXIDE SURFACES

被引:61
作者
WHITE, CW [1 ]
SIMMS, DI [1 ]
TOLK, NH [1 ]
MCCAUGHAN, DV [1 ]
机构
[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974
关键词
D O I
10.1016/0039-6028(75)90378-7
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:657 / 663
页数:7
相关论文
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