OPTIMUM OVERLAP OF ELECTRIC AND OPTICAL-FIELDS IN SEMICONDUCTOR WAVE-GUIDE DEVICES

被引：10

作者：

ADAMS, MJ

RITCHIE, S

ROBERTSON, MJ

机构：

来源：

关键词：

D O I：

10.1063/1.96678

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：820 / 822

页数：3

共 7 条

[1] ADAMS MJ, 1981, INTRO OPTICAL WAVEGU, P141
[2] INTRABAND AND INTERBAND FREE-CARRIER ABSORPTION AND FUNDAMENTAL ABSORPTION EDGE IN N-TYPE INP
DUMKE, WP
LORENZ, MR
PETTIT, GD
[J]. PHYSICAL REVIEW B, 1970, 1 (12): : 4668 - &
[3] HIMURA K, 1985, APPL PHYS LETT, V47, P186
[4] OPTIMAL ELECTRODE DESIGN FOR INTEGRATED-OPTICS MODULATORS
MARCUSE, D
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (03) : 393 - 398
[5] INFRARED ABSORPTION AND ELECTRON EFFECTIVE MASS IN N-TYPE GALLIUM ARSENIDE
SPITZER, WG
WHELAN, JM
[J]. PHYSICAL REVIEW, 1959, 114 (01): : 59 - 63
[6] UNGER HG, 1971, AEU-ARCH ELEKTRON UB, V25, P539
[7] Yariv A., 1984, OPTICAL WAVES CRYSTA, P230