SCATTERING BY A NARROW GAP

被引:62
作者
SENIOR, TBA
SARABANDI, K
NATZKE, JR
机构
[1] Radiation Laboratory, Electrical Engineering and Computer Science Department, University of Michigan, Ann Arbor
关键词
D O I
10.1109/8.55624
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
For a plane wave incident on a cavity-backed gap in a perfectly conducting plane, the coupled integral equations for the induced currents have been solved numerically and the farfield scattering computed. The results are compared with a quasi-analytic solution previously derived, and for a narrow gap the agreement is excellent for all cavity geometries and for all material fillings that have been tested. © 1990 IEEE
引用
收藏
页码:1102 / 1110
页数:9
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[5]  
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