ELECTRON-MOBILITY IN LPE HG1-XCDXTE/CDTE LAYERS NEAR ZERO BAND-GAP CROSSING

被引：8

作者：

BAJAJ, J

SHIN, SH

BOSTRUP, G

CHEUNG, DT

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1982年 / 21卷 / 01期

关键词：

D O I：

10.1116/1.571726

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：244 / 246

页数：3

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[1] BASTARD G, 1978, 3RD P INT C PHYS NAR
[2] DORNHAUS R, 1976, SOLID STATE PHYSICS
[3] ELECTRON-SCATTERING IN CDXHG1-XTE
DUBOWSKI, JJ
DIETL, T
SZYMANSKA, W
GALAZKA, RR
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1981, 42 (05) : 351 - 362
[4] RECOMBINATION MECHANISMS IN 8-14-MU HGCDTE
KINCH, MA
BRAU, MJ
SIMMONS, A
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (04) : 1649 - 1663
[5] INTRINSIC CARRIER CONCENTRATION OF HG1-CHICDCHITE AS A FUNCTION OF CHI AND T USING K-P CALCULATIONS
SCHMIT, JL
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (07) : 2876 - &
[6] ELECTRON MOBILITY IN HG1-X CDX TE
SCOTT, W
[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (03) : 1055 - +
[7] LIQUID-PHASE GROWTH OF HGCDTE EPITAXIAL LAYERS
WANG, CC
SHIN, SH
CHU, M
LANIR, M
VANDERWYCK, AHB
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (01) : 175 - 179