DIFFERENTIAL RESISTANCE PEAKS OF SCHOTTKY BARRIER DIODES

被引:35
作者
STRATTON, R
PADOVANI, FA
机构
关键词
D O I
10.1016/0038-1101(67)90164-5
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:813 / &
相关论文
共 12 条
[1]   ELECTRON TUNNELING IN METAL-SEMICONDUCTOR BARRIERS [J].
CONLEY, JW ;
DUKE, CB ;
MAHAN, GD ;
TIEMANN, JJ .
PHYSICAL REVIEW, 1966, 150 (02) :466-&
[2]   BAND STRUCTURE OF INDIUM ANTIMONIDE [J].
KANE, EO .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 1 (04) :249-261
[3]   FERMI LEVEL POSITION AT METAL-SEMICONDUCTOR INTERFACES [J].
MEAD, CA ;
SPITZER, WG .
PHYSICAL REVIEW, 1964, 134 (3A) :A713-+
[4]   THERMIONIC EMISSION, FIELD EMISSION, AND THE TRANSITION REGION [J].
MURPHY, EL ;
GOOD, RH .
PHYSICAL REVIEW, 1956, 102 (06) :1464-1473
[5]   FIELD AND THERMIONIC-FIELD EMISSION IN SCHOTTKY BARRIERS [J].
PADOVANI, FA ;
STRATTON, R .
SOLID-STATE ELECTRONICS, 1966, 9 (07) :695-&
[6]   EXPERIMENTAL ENERGY-MOMENTUM RELATIONSHIP DETERMINATION USING SCHOTTKY BARRIERS [J].
PADOVANI, FA ;
STRATTON, R .
PHYSICAL REVIEW LETTERS, 1966, 16 (26) :1202-&
[7]  
PILLER H, 1966, J PHYS SOC JPN, VS 21, P206
[8]  
PILLER H, 1966, P INT C PHYSICS SEMI
[9]  
STRADLING RA, PRIVATE COMMUNICATIO