EPITAXIAL-GROWTH OF SRTIO3 FILMS ON SI(100) SUBSTRATES USING A FOCUSED ELECTRON-BEAM EVAPORATION METHOD

A novel epitaxial growth method of SrTiO3 films on Si(100) substrates is presented in which, in order to reduce the surface oxide layers of the substrates, thin Sr layers are deposited prior to deposition of SrTiO3 films. It has been shown that the film composition becomes nearly stoichiometric when single-crystalline SrTiO3 sources are evaporated by a focused electron beam and that SrTiO3 films grow epitaxially on Si(100) substrates under the optimum conditions of the Sr layer thickness, deposition temperature, and annealing temperature.