STRUCTURE IN STOKES OUTPUT OF INSB SPIN-FLIP RAMAN LASER

被引：16

作者：

FAVROT, G

AGGARWAL, RL

LAX, B

机构：

[1] MIT,FRANCIS BITTER NATL MAGNET LAB,CAMBRIDGE,MA 02139

[2] MIT,DEPT PHYS,CAMBRIDGE,MA 02139

来源：

SOLID STATE COMMUNICATIONS | 1976年 / 18卷 / 05期

关键词：

D O I：

10.1016/0038-1098(76)91485-X

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：577 / 580

页数：4

共 11 条

[1] FUNDAMENTAL LOSS MECHANISMS OF SPIN-FLIP RAMAN LASER [J].

DENNIS, RB ;

SMITH, SD ;

SMITH, JW ;

WOOD, RA ;

PIDGEON, CR .

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1972, 5 (08) :L73-&

[2] STIMULATED SPIN-FLIP RAMAN-SCATTERING - MAGNETICALLY TUNABLE INFRARED LASER .1. [J].

DENNIS, RB ;

PIDGEON, CR ;

SMITH, SD ;

WHERRETT, BS ;

WOOD, RA .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, 1972, 331 (1585) :203-236

[3] FAR-INFRARED PHONON ABSORPTION IN INSB [J].

KOTELES, ES ;

DATARS, WR ;

DOLLING, G .

PHYSICAL REVIEW B, 1974, 9 (02) :572-582

[4] OPTICAL ABSORPTION IN PURE SINGLE CRYSTAL INSB AT 298-DEGREES-K AND 78-DEGREES-K [J].

KURNICK, SW ;

POWELL, JM .

PHYSICAL REVIEW, 1959, 116 (03) :597-604

[5] TUNABLE STIMULATED RAMAN SCATTERING FROM MOBILE CARRIERS IN SEMICONDUCTORS [J].

PATEL, CKN ;

SHAW, ED .

PHYSICAL REVIEW B, 1971, 3 (04) :1279-&

[6] TUNABLE STIMULATED RAMAN SCATTERING FROM CONDUCTION ELECTRONS IN INSB [J].

PATEL, CKN ;

SHAW, ED .

PHYSICAL REVIEW LETTERS, 1970, 24 (09) :451-&

[7]

WACHERING H, 1974, 12TH P INT C PHYS SE, P803

[8] SPIN-FLIP RAMAN LASER AT MAGNETIC-FIELDS UP TO 14-T [J].

WACHERNIG, H ;

GRISAR, R .

SOLID STATE COMMUNICATIONS, 1974, 15 (08) :1365-1367

[9]

WACHERNIG H, 1975, C DIGEST INT C INFRA, P250

[10] MAGNETOABSORPTION IN N-TYPE INSB FROM 8 TO 15 MU-M [J].

WEILER, MH ;

AGGARWAL, RL ;

LAX, B .

SOLID STATE COMMUNICATIONS, 1974, 14 (04) :299-302

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