HIGH-POWER SUPERLUMINESCENT DIODES

被引：113

作者：

ALPHONSE, GA

GILBERT, DB

HARVEY, MG

ETTENBERG, M

机构：

[1] David Sarnoff Research Cent,, Princeton, NJ, USA

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1988年 / 24卷 / 12期

关键词：

Luminescence - Semiconducting Aluminum Compounds - Semiconductor Devices--Heterojunctions;

D O I：

10.1109/3.14376

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

By inclining the active stripe of a planar AlGaAs double heterojunction structure by 5° with respect to the facets, reflection feedback has been eliminated and high-power superluminescent diodes emitting 28 mW with less than 5% spectral modulation have been obtained.

引用

收藏

页码：2454 / 2457

页数：4

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