TAPERED THICKNESS MQW WAVE-GUIDE BH MQW LASERS

被引：70

作者：

KOBAYASHI, H

EKAWA, M

OKAZAKI, N

AOKI, O

OGITA, S

SODA, H

机构：

[1] Fujitsu Laboratories Ltd., Atsugi, Kanagawa

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1994年 / 6卷 / 09期

关键词：

D O I：

10.1109/68.324674

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We propose and demonstrate a novel 1.3 mum InGaAsP/InGaAsP multiple-quantum-well (MQW) BH Fabry-Perot laser diode monolithically integrated with a MQW tapered thickness waveguide. A selective area growth (SAG) technique is used to fabricate the tapered thickness waveguide with low absorption loss and to integrate it with the MQW gain region with a high coupling efficiency. We achieve very narrow vertical and lateral far-field FWHM of 11.8-degrees and 8.0-degrees, with low threshold current of 19 mA and high slope efficiency of 0.25 mW/mA.

引用

页码：1080 / 1081

页数：2

共 6 条

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