CHEMICAL ETCHING OF GERMANIUM IN SYSTEM HF-H2O2-H2O

被引：16

作者：

SCHWARTZ, B

机构：

来源：

关键词：

D O I：

10.1149/1.2426568

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：285 / &

共 19 条

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[9]

KLEIN D, PRIVATE COMMUNICATIO

[10] CONTROLLED ETCHING OF SILICON IN THE HF-HNO3 SYSTEM [J].

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DSTEFAN, DJ .