METHOD OF SELENIZING LIQUID CU-IN ALLOY IN GROWING CUINSE2 SINGLE-CRYSTALS

被引：6

作者：

NOMURA, S

TAKIZAWA, T

机构：

[1] College of Humanities and Sciences, Nihon University, Tokyo

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 128卷 / 1-4期

关键词：

D O I：

10.1016/S0022-0248(07)80019-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Stoichiometry-controlled growth of single-crystalline CuInSe2 has been studied using a method of selenizing liquid Cu-In alloy. X-ray diffraction study reveals that selenization temperatures above the melting point of CuInSe2 are indispensable for the single-phase synthesis with preventing binary additional phases such as Cu7Se4 and In2Se. The electrical properties are controllable by adjusting the initial Cu/In ratio and/or applied selenium vapor pressure during the crystal growth. The application of selenium vapor pressure around 200 Torr is effective for the reduction of imperfections in p-type crystals.

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页码：659 / 663

页数：5

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