ANNEALING CHARACTERISTICS AND LATTICE SITE LOCATION OF 40 KEV SN IMPLANTATIONS IN GAAS

被引：6

作者：

FINSTAD, TG ^{[1
]}

ANDERSEN, SL ^{[1
]}

OLSEN, T ^{[1
]}

机构：

[1] UNIV OSLO,INST PHYS,OSLO,NORWAY

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1974年 / 25卷 / 02期

关键词：

D O I：

10.1002/pssa.2210250218

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：515 / 521

页数：7

共 23 条

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[7] ION IMPLANTATION OF SILICON .I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MEV HELIUM ION SCATTERING [J].

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ERIKSSON, L ;

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[9]

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[10]

EISEN FH, 1973, 3 P INT C ION IMPL

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