LARGE CAPACITY ION-IMPLANTED BUBBLE-DEVICES

被引:6
作者
BONYHARD, PI
HAGEDORN, FB
EKHOLM, DT
MUEHLNER, DJ
NELSON, TJ
ROMAN, BJ
机构
关键词
D O I
10.1109/TMAG.1982.1061816
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:737 / 740
页数:4
相关论文
共 12 条
[1]   ION-IMPLANTED BUBBLE MEMORY DEVICE CHIP ORGANIZATION [J].
BONYHARD, PI ;
NELSON, TJ .
IEEE TRANSACTIONS ON MAGNETICS, 1982, 18 (02) :740-744
[2]  
BONYHARD PI, 1981, 1981 INTERMAG C GREN
[3]  
BONYHARD PI, 1980, SEP ICMB4 TOK
[4]  
BURFORD TM, UNPUB
[5]  
KOMENOU K, 1980, SEP ICMB 4 TOK
[6]  
KOMENOU K, 1981, 1981 INTERMAG C GREN
[7]   CONTIGUOUS-ELEMENT MEMORIES INCREASE STORAGE TENFOLD [J].
LIN, YS ;
SANDERS, IL .
IEEE SPECTRUM, 1981, 18 (02) :30-34
[8]   SELF-ALIGNED CONTIGUOUS-DISK CHIP USING 1-MU-M BUBBLES AND CHARGED-WALL FUNCTIONS [J].
LIN, YS ;
ALMASI, GS ;
KEEFE, GE ;
PUGH, EW .
IEEE TRANSACTIONS ON MAGNETICS, 1979, 15 (06) :1642-1647
[9]   DESIGN OF BUBBLE DEVICE ELEMENTS EMPLOYING ION-IMPLANTED PROPAGATION PATTERNS [J].
NELSON, TJ ;
WOLFE, R ;
BLANK, SL ;
BONYHARD, PI ;
JOHNSON, WA ;
ROMAN, BJ ;
VELLACOLEIRO, GP .
BELL SYSTEM TECHNICAL JOURNAL, 1980, 59 (02) :229-257
[10]   ION-IMPLANTED BUBBLE CIRCUIT FUNCTION DESIGN [J].
NELSON, TJ ;
BONYHARD, PI ;
GEUSIC, JE ;
HAGEDORN, FB ;
JOHNSON, WA ;
WAGNER, WDP .
IEEE TRANSACTIONS ON MAGNETICS, 1981, 17 (01) :1134-1141