NOISE PHENOMENA ASSOCIATED WITH DISLOCATIONS IN BIPOLAR-TRANSISTORS

被引：19

作者：

MIHAILA, M ^{[1
]}

AMBERIADIS, K ^{[1
]}

机构：

[1] UNIV MINNESOTA,DEPT ELECT ENGN,MINNEAPOLIS,MN 55455

来源：

SOLID-STATE ELECTRONICS | 1983年 / 26卷 / 02期

关键词：

D O I：

10.1016/0038-1101(83)90111-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：109 / &

共 15 条

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[8] RECOMBINATION OF ELECTRONS AND HOLES AT DISLOCATIONS [J].

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[9] DISTRIBUTION OF SURFACE STATE DENSITY RELATED TO DIFFUSION-INDUCED DISLOCATIONS NEAR JUNCTION FORMED BY DIFFUSION OF PHOSPHORUS IN SILICON [J].

NISHIDA, M .

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[10] EFFECTS OF DIFFUSION-INDUCED DISLOCATIONS ON EXCESS LOW-FREQUENCY NOISE [J].

NISHIDA, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (03) :221-226

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